Ion Beam Processing - List of Manufacturers, Suppliers, Companies and Products

[Information] Cross-section production method

We are publishing the main cross-section manufacturing methods, processing conditions, advantages & disadvantages, etc.!

This document introduces methods for preparing cross-sections. When conducting observations, analyses, or evaluations, there may be a need to prepare cross-sections. By selecting or combining methods that are appropriate for the purpose, material, and structure, it is possible to obtain highly reliable results. In mechanical processing, we include main cross-section preparation methods such as "mechanical polishing" and "microtome." In ion beam processing, methods like "FIB" and "ion polisher (CP)" are also featured. We encourage you to read it. [Contents] ■ Main cross-section preparation methods ■ Processing conditions ■ Advantages & disadvantages *For more details, please refer to the PDF document or feel free to contact us.

Company：アイテス
Price：Other

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FIB low acceleration processing

FIB: Focused Ion Beam Processing

In the method for preparing thin film samples for TEM observation using FIB, high-energy Ga ions (acceleration voltage of 30 kV) are used, resulting in the formation of a damage layer on the processed surface, which causes a deterioration in the image quality of the TEM. By performing processing at a lower acceleration (2 kV) than conventional methods, the damage layer can be reduced, leading to improved image quality. By reducing the damage on the FIB processed surface through low-acceleration FIB processing, high-quality and reliable data can be obtained in TEM image observation and EELS measurements.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

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[FIB] Focused Ion Beam Processing

FIB refers to a focused ion beam with a diameter ranging from a few nanometers to several hundred nanometers, which can be used to scan the sample surface to etch or deposit material in specific areas.

FIB refers to a focused ion beam with diameters ranging from several nanometers to several hundred nanometers, which can be used to etch specific areas (sputtering) or deposit materials such as carbon (C), tungsten (W), and platinum (Pt) onto specific regions by scanning the sample surface. Additionally, the shape of the processed sample can be recognized through SIM images, which detect secondary electrons generated by irradiating the sample with the ion beam. - Arbitrary shape processing through etching in micro-regions (several nanometers to several tens of micrometers) is possible (typical processing size: around 20 μm) - Sample preparation for SEM, SEM-STEM, and TEM imaging (cross-sections of specific areas can be produced) - Fine pattern deposition and thin film formation (C, W, Pt deposition) are possible in the range of several micrometers to several tens of micrometers - High-resolution SIM (Scanning Ion Microscope) imaging is possible (acceleration voltage 30 kV: 4 nm) - Observation of metal crystal grains (Al, Cu, etc.) is possible with SIM images.